| PART |
Description |
Maker |
| FLL120MK |
L-band Medium & High Power GAAS Fets
|
FUJITSU
Eudyna Devices Inc
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CFC030106 CFC0301 |
Medium Power GaAs FETs
|
MIMIX[Mimix Broadband]
|
| TC1201V |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| TC3957 |
1W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC2491 |
0.5 W Flange Ceramic Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC2997B |
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
|
Transcom, Inc.
|
| TC3977 |
3 W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
